Method of fabricating semiconductor devices

Details Method of fabricating semiconductor devices Method of fabricating semiconductor devices

2008-03-11

2008-03-11

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S380000, C257S298000, C257S300000, C257S355000, C257S363000

Reexamination Certificate

active

07342285

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. First, a substrate is provided. The substrate includes at least a transistor area having a gate structure thereon, a capacitor area having a first electrode thereon and a resistor area having a second electrode thereon. The capacitor area and the resistor area both have an isolation structure therein. Then, first spacers and source/drain regions on both sides of the gate are sequentially formed. After that, a dielectric layer and a first conductive material layer are sequentially formed on the substrate. Next, the first conductive material layer is patterned to form a third electrode in the capacitor area and a conductive layer in the resistor area. Then, second spacers are formed. Afterwards, the exposed dielectric layer is removed. Finally, a self-aligned silicide process is performed to form a metal salicide layer to cover the surface of the device.

REFERENCES:
patent: 5434098 (1995-07-01), Chang
patent: 6218234 (2001-04-01), Yu et al.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2791574