Semiconductor structure with field shield and method of...

Details Semiconductor structure with field shield and method of... Semiconductor structure with field shield and method of...

2008-07-15

2008-07-15

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S347000, C438S122000, C438S479000

Reexamination Certificate

active

07400015

ABSTRACT:
Disclosed is semiconductor structure that incorporates a field shield below a semiconductor device (e.g., a field effect transistor (FET) or a diode). The field shield is sandwiched between upper and lower isolation layers on a wafer. A local interconnect extends through the upper isolation layer and connects the field shield to a selected doped semiconductor region of the device (e.g., a source/drain region of a FET or a cathode or anode of a diode). Current that passes into the device, for example, during back-end of the line charging, is shunted by the local interconnect away from the upper isolation layer and down into the field shield. Consequently, an electric charge is not allowed to build up in the upper isolation layer but rather bleeds from the field shield into the lower isolation layer and into the substrate below. This field shield further provides a protective barrier against any electric charge that becomes trapped within the lower isolation layer or substrate.

REFERENCES:
patent: 5606188 (1997-02-01), Bronner et al.
patent: 6107660 (2000-08-01), Yang et al.
patent: 6190985 (2001-02-01), Buynoski
patent: 6483223 (2002-11-01), Samper et al.
patent: 6847114 (2005-01-01), Sett et al.
patent: 2005/0121734 (2005-06-01), Degertekin et al.
patent: 2008/0067613 (2008-03-01), Anderson et al.

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