Semiconductor device and method of manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond

Reexamination Certificate

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C257S778000, C257S738000

Reexamination Certificate

active

07372167

ABSTRACT:
A semiconductor device according to claim 1, wherein A method of manufacturing a semiconductor chip the carrier substrate A semiconductor device includes; a carrier substrate in which a semiconductor chip is mounted; a first land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a basis metal of an junction surface of the first land is exposed; and a second land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a plating layer is deposited on a junction surface of the second land.

REFERENCES:
patent: 5796163 (1998-08-01), Glenn et al.
patent: 6448647 (2002-09-01), Kurita et al.
patent: 6762506 (2004-07-01), Amagai et al.
patent: 2003/0230799 (2003-12-01), Yee et al.
patent: A 10-335533 (1998-12-01), None
patent: A 10-340972 (1998-12-01), None
patent: A 2003-124264 (2003-04-01), None
patent: A 2003-332497 (2003-11-01), None
patent: A 2004-158737 (2004-06-01), None

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