Top-gate thin-film transistor

Details Top-gate thin-film transistor Top-gate thin-film transistor

2008-07-08

2008-07-08

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S040000, C257S233000, C257SE29151, C257SE29273, C257SE29314

Reexamination Certificate

active

07397086

ABSTRACT:
A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the polymer is selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. In other embodiments, it is a self-assembling polymeric monolayer of a silane agent and an organophosphonic acid. The performance-enhancing layer directly contacts the substrate. The layer improves the carrier mobility and current on/off ratio of the thin film transistor.

REFERENCES:
patent: 6952036 (2005-10-01), Suzuki et al.
patent: 2004/0129937 (2004-07-01), Hirai
patent: 2004/0129978 (2004-07-01), Hirai
patent: 2005/0051780 (2005-03-01), Ando et al.
patent: 2005/0211975 (2005-09-01), Kawasaki et al.
patent: 2005/0285102 (2005-12-01), Koo et al.
patent: 2006/0220126 (2006-10-01), Huisman et al.
patent: 2007/0012914 (2007-01-01), Miura et al.

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