Method of forming wiring pattern

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S597000, C438S618000, C438S640000, C438S660000, C257SE21476

Reexamination Certificate

active

07405156

ABSTRACT:
A photoresist pattern is formed on an insulating substrate so that it has a reverse tapered cross section and a reverse pattern of a wiring pattern to be formed. Next, a nanoparticles-containing ink is injected on a wiring region using an inkjet system, followed by a leveling process, a drying process, a resist separation process and a baking process. Thus a wiring pattern is formed.

REFERENCES:
patent: 4539507 (1985-09-01), VanSlyke et al.
patent: 2005/0196969 (2005-09-01), Gunner et al.
patent: 02-188924 (1990-07-01), None
patent: 07-22395 (1995-01-01), None
patent: 2001-35814 (2001-02-01), None
patent: 2003-188497 (2003-07-01), None
patent: 2003-209341 (2003-07-01), None

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