Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-08-23
2011-08-23
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189090, C365S226000, C365S227000, C365S228000, C365S229000
Reexamination Certificate
active
08004920
ABSTRACT:
Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is applied to the line when the memory cell is not being accessed, and a power controller to cause the voltage to change during a time interval after a refresh operation of the memory device. Other embodiments including additional apparatus, systems, and methods are disclosed.
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Abe Keiichiro
Ito Yutaka
Nomura Masayoshi
Ho Hoai V
Micro)n Technology, Inc.
Radke Jay
Schwegman Lundberg & Woessner, P.A.
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