Semiconductor device and its manufacture method

Details Semiconductor device and its manufacture method Semiconductor device and its manufacture method

2008-01-29

2008-01-29

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S500000, C257S501000, C257SE29020, C257SE29005, C257SE29132

Reexamination Certificate

active

07323754

ABSTRACT:
Multiple kinds of transistors exhibiting desired characteristics are manufactured in fewer processes. A semiconductor device includes an isolation region reaching a first depth, first and second wells of first conductivity type, a first transistor formed in the first well and having a gate insulating film of a first thickness, and a second transistor formed in the second well and having a gate insulating film of a second thickness less than the first thickness. The first well has a first impurity concentration distribution having an extremum maximum value only at the depth equal to or greater than the first depth. The second well has a second impurity concentration distribution which is superposition of the first impurity concentration distribution, and another impurity concentration distribution which shows an extremum maximum value at a second depth less than the first depth, the superposition shows also an extremum maximum value at the second depth.

REFERENCES:
patent: 6228697 (2001-05-01), Furukawa et al.
patent: 6479346 (2002-11-01), Yi et al.
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 8-204022 (1996-08-01), None
patent: 8-204025 (1996-08-01), None
patent: 8-204025 (1996-08-01), None
patent: 9-45792 (1997-02-01), None
patent: 11-4004 (1999-01-01), None
patent: 11-135750 (1999-05-01), None
patent: 2000-150662 (2000-05-01), None
patent: 2000-0048212 (2000-07-01), None
patent: 2000-73371 (2000-12-01), None
Korean Office Action of Corresponding Application No. 10-2005-7009649 dated Oct. 30, 2006.
Office Action dated Apr. 20, 2007 issued in corresponding Chinese Application No. 038253836.

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