Sidewall semiconductor transistors

Details Sidewall semiconductor transistors Sidewall semiconductor transistors

2008-07-08

2008-07-08

Warren, Matthew E. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257SE27112, C257SE29131

Reexamination Certificate

active

07397081

ABSTRACT:
A novel transistor structure and method for fabricating the same. The transistor structure comprises (a) a substrate and (b) a semiconductor region, a gate dielectric region, and a gate region on the substrate, wherein the gate dielectric region is sandwiched between the semiconductor region and the gate region, wherein the semiconductor region is electrically insulated from the gate region by the gate dielectric region, wherein the semiconductor region comprises a channel region and first and second source/drain regions, wherein the channel region is sandwiched between the first and second source/drain regions, wherein the first and second source/drain regions are aligned with the gate region, wherein the channel region and the gate dielectric region (i) share an interface surface which is essentially perpendicular to a top surface of the substrate, and (ii) do not share any interface surface that is essentially parallel to a top surface of the substrate.

REFERENCES:
patent: 5281547 (1994-01-01), Uchiyama et al.
patent: 6903967 (2005-06-01), Mathew et al.
patent: 7105390 (2006-09-01), Brask et al.

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