Semiconductor device with improved breakdown voltage and...

Details Semiconductor device with improved breakdown voltage and... Semiconductor device with improved breakdown voltage and...

2008-05-13

2008-05-13

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S266000, C257S341000, C257S342000, C257S339000, C257S490000, C257S493000

Reexamination Certificate

active

07372111

ABSTRACT:
The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the drain drift section, which includes a second alternating conductivity type layer formed of second n-type regions and second p-type regions arranged alternately. The peripheral section further includes a third alternating conductivity type layer in its surface portion. The third alternating conductivity type layer is formed of third n-type regions and third p-type regions arranged alternately. At least the peripheral section is configured to improve the avalanche withstanding capability over the entire device.

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patent: 2004-72068 (2004-03-01), None

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