Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S408000, C257SE29266
Reexamination Certificate
active
08004050
ABSTRACT:
A semiconductor device is disclosed, which comprises a gate electrode having a laminated structure of a polycrystalline silicon film or a polycrystalline germanium film containing arsenic and a first nickel silicide layer formed in sequence on an element forming region of a semiconductor substrate through a gate insulating film, a sidewall insulating film formed on a side surface of the gate electrode, source/drain layers containing arsenic formed in the element forming region at both side portions of the gate electrode, and second nickel silicide layers formed on the source/drain layers, wherein a peak concentration of arsenic contained in the gate electrode is at least 1/10 of a peak concentration of arsenic contained in the source/drain layers.
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Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Karimy Mohammad T
Smith Bradley K
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