Structures for resistive random access memory cells

Details Structures for resistive random access memory cells Structures for resistive random access memory cells

2011-08-16

2011-08-16

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000

Reexamination Certificate

active

08000128

ABSTRACT:
A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

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Kohtaroch Gotoh et al., Jpn. J. Appl. Phys. (25) 39 (1996).
H. Kohlstedt et al., Physical Rev. B (72) 125431( 2005).

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