Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-05-13

2008-05-13

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257SE27062, C257SE29116

Reexamination Certificate

active

07372108

ABSTRACT:
The present invention discloses a semiconductor device and a manufacturing method thereof which improves its characteristics even though it is miniaturized. According to one aspect of the present invention, it is provided a semiconductor device comprising a first semiconductor element device including a pair of first diffusion layers formed in the semiconductor substrate with a first gate electrode therebetween, and a first conductor layer formed in the first diffusion layer and having an internal stress in a first direction, and a second semiconductor element device including a pair of second diffusion layers formed in the semiconductor substrate with a second gate electrode therebetween, and a second conductor layer formed in the second diffusion layer, having an internal stress in a second direction opposite to the first direction, and constituted of the same element as that of the first conductor layer.

REFERENCES:
patent: 6982465 (2006-01-01), Kumagai et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2006/0163670 (2006-07-01), Ellis-Monaghan et al.
patent: 2006/0180866 (2006-08-01), Zhu et al.
patent: 2007/0018252 (2007-01-01), Zhu
patent: 2003-60076 (2003-02-01), None
patent: 2005-57301 (2005-03-01), None

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