Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-15
2008-04-15
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S674000, C257SE21479
Reexamination Certificate
active
07358183
ABSTRACT:
The present invention provides a method for manufacturing a wiring and a method for manufacturing a semiconductor device, which do not require a photolithography step in connecting a pattern of an upper layer and a pattern of a lower layer. According to the present invention, a composition including a conductive material is discharged locally and an electric conductor to function as a pillar is formed on a first pattern over a substrate, an insulator is formed to cover the electric conductor, the insulator is etched to expose a top surface of the electric conductor, and a second pattern is formed on the top surface of electric conductor that is exposed.
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Office Action re Chinese patent application No. CN 200410057761.7, dated Dec. 21, 2007 (with full English translation).
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Geyer Scott B.
Semiconductor Energy Laboratory Co,. Ltd.
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