Semiconductor device comprising gate electrode

Details Semiconductor device comprising gate electrode Semiconductor device comprising gate electrode

2011-03-29

2011-03-29

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000

Reexamination Certificate

active

07915695

ABSTRACT:
A semiconductor device capable of reducing deterioration of electron mobility while suppressing depletion of gate electrodes is provided. This semiconductor device includes a metal-containing layer so formed that at least either a first gate electrode or a second gate electrode partially covers a corresponding first or second gate insulating film and a semiconductor layer formed on the metal-containing layer to come into contact with a portion of the corresponding first or second gate insulating film not covered with the metal-containing layer. The first and second gate electrodes contain metals different from each other.

REFERENCES:
patent: 5926360 (1999-07-01), Laibowitz et al.
patent: 6020260 (2000-02-01), Gardner
patent: 6727130 (2004-04-01), Kim et al.
patent: 7005697 (2006-02-01), Batra et al.
patent: 7375403 (2008-05-01), Kaneko et al.
patent: 7687869 (2010-03-01), Kaneko et al.
patent: 2003/0183901 (2003-10-01), Kanda et al.
patent: 2004/0000695 (2004-01-01), Matsuo
patent: 2004/0014306 (2004-01-01), Komatsu
patent: 2004/0080001 (2004-04-01), Takeuchi
patent: 2005/0167762 (2005-08-01), Kadoshima et al.
patent: 2010/0159686 (2010-06-01), Kaneko et al.
patent: 2000-252370 (2000-09-01), None
patent: 2002-359295 (2002-12-01), None
patent: 2003-023152 (2003-01-01), None
patent: 2003-204000 (2003-07-01), None
patent: 2004-165346 (2004-06-01), None
patent: 2005-108875 (2005-04-01), None
Japanese Notification of Reasons for Rejection, with English Translation, issued in Japanese Patent Application No. 2005-158735, dated Aug. 24, 2010.

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