Non-volatile memory cell and non-volatile memory cell array...

Details Non-volatile memory cell and non-volatile memory cell array... Non-volatile memory cell and non-volatile memory cell array...

2011-08-30

2011-08-30

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE21209

Reexamination Certificate

active

08008706

ABSTRACT:
The present invention relates to a non-volatile memory cell and a method of fabricating the same. The non-volatile memory cell according to the present invention comprises a substrate, a first oxide film formed over an active region of the substrate, a source and drain formed within the active region, a charge storage unit formed on the first oxide film, a second oxide film configured to surround the charge storage unit and formed on the first oxide film, and a gate formed to surround the second oxide film. According to the non-volatile memory cell and a cell array including the same in accordance with the present invention, the charge storage unit is fully surrounded by the gate or the gate line, thus a disturbance phenomenon that may occur due to the memory operation of cells formed in other neighboring gate or gate line can be minimized.

REFERENCES:
patent: 2004/0238879 (2004-12-01), Endoh et al.
patent: 2007/0004137 (2007-01-01), Oh et al.

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