Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2011-03-08
2011-03-08
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S205000, C365S154000, C365S063000
Reexamination Certificate
active
07903490
ABSTRACT:
The present invention provides a semiconductor memory device in which the number of write amplifiers is decreased by increasing the number of bit line pairs connected to one pair of common write data lines. Further, by decreasing the number of bit line pairs connected to one pair of common read data lines, parasitic capacitance connected to the pair of common read data lines is reduced and, accordingly, time in which the potential difference between the pair of common read data lines increases is shortened. Thus, while preventing enlargement of the chip layout area, read time can be shortened.
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Sato Hajime
Shinozaki Masao
A. Marquez, Esq. Juan Carlos
Hoang Huan
Renesas Electronics Corporation
Stites & Harbison PLLC
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