Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-08-23
2011-08-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S076000, C257SE29315
Reexamination Certificate
active
08004011
ABSTRACT:
A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance.
REFERENCES:
patent: 4945393 (1990-07-01), Beltram et al.
patent: 5144379 (1992-09-01), Eshita et al.
patent: 5362678 (1994-11-01), Komaru et al.
patent: 6605519 (2003-08-01), Lishan
patent: 7194173 (2007-03-01), Shtein et al.
patent: 2003/0213975 (2003-11-01), Hirose et al.
patent: 2005/0001235 (2005-01-01), Murata et al.
patent: 2005/0140274 (2005-06-01), Lee et al.
patent: 2005/0151195 (2005-07-01), Kawase et al.
patent: 2005/0189561 (2005-09-01), Kinzer et al.
patent: 2005/0274977 (2005-12-01), Saito et al.
patent: 2006/0019435 (2006-01-01), Sheppard et al.
patent: 2006/0065911 (2006-03-01), Twynam
patent: 2006/0097261 (2006-05-01), Yang
patent: 2006/0108602 (2006-05-01), Tanimoto
patent: 2007/0103055 (2007-05-01), Tomai et al.
patent: 2003-320071 (2003-11-01), None
patent: WO 03/019598 (2003-03-01), None
Cui, et al., “Indium Tin Oxide Alternatives-High Work Function Transparent Conducting Oxides as Anodes for Organic Light-Emitting Diodes,”Advanced Materials(2001), pp. 1476-1479, vol. 13, Wiley-Vch,Verlag GmbH, Weinheim, Germany.
Jiang, et al., “Aluminum-Doped Zinc Oxide Films as Transparent Conductive Electrode for Organic Light-Emitting Devices,”Applied Physics Letters(2003), pp. 1875-1877, vol. 83, American Institute of Physics.
Morita Tatsuo
Ueda Tetsuzo
Ahmed Selim
Panasonic Corporation
Pert Evan
Steptoe & Johnson LLP
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