Field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257S076000, C257SE29315

Reexamination Certificate

active

08004011

ABSTRACT:
A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance.

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Cui, et al., “Indium Tin Oxide Alternatives-High Work Function Transparent Conducting Oxides as Anodes for Organic Light-Emitting Diodes,”Advanced Materials(2001), pp. 1476-1479, vol. 13, Wiley-Vch,Verlag GmbH, Weinheim, Germany.
Jiang, et al., “Aluminum-Doped Zinc Oxide Films as Transparent Conductive Electrode for Organic Light-Emitting Devices,”Applied Physics Letters(2003), pp. 1875-1877, vol. 83, American Institute of Physics.

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