Surface preparation process for damascene copper deposition

Details Surface preparation process for damascene copper deposition Surface preparation process for damascene copper deposition

2011-08-16

2011-08-16

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000

Reexamination Certificate

active

07998859

ABSTRACT:
A method is disclosed for metallizing a substrate comprising an interconnect feature in the manufacture of a microelectronic device, wherein the interconnect feature comprises a bottom, a sidewall, and a top opening having a diameter, D. The method comprises the following steps: depositing a barrier layer on the bottom and the sidewall of the interconnect feature, the barrier layer comprising a metal selected from the group consisting of ruthenium, tungsten, tantalum, titanium, iridium, rhodium, and combinations thereof; contacting the substrate comprising the interconnect feature comprising the bottom and sidewall having the barrier layer thereon with an aqueous composition comprising a reducing agent and a surfactant; and depositing copper metal onto the bottom and the sidewall of the interconnect feature having the barrier layer thereon.

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Electroless Copper Deposition on Ruthenium for Damascene Interconnects; ECS Transactions; Q. Chen, X. Lin, C. Valverde, V. Paneccasio, R. Hurtubise, P. Ye, E. Kudrak, and J. Abys; Sep. 27, 2007.
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