Trench FET with reduced mesa width and source contact inside...

Details Trench FET with reduced mesa width and source contact inside... Trench FET with reduced mesa width and source contact inside...

2008-07-22

2008-07-22

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S401000, C257S413000, C257S754000, C257S773000

Reexamination Certificate

active

07402863

ABSTRACT:
A trench FET has source contacts which contact the entire top surface of source regions, and contact a portion of side walls of the source regions. The side walls of the source regions form a portion of the side walls of the trenches in the trench FET.

REFERENCES:
patent: 5945701 (1999-08-01), Siergiej et al.
patent: 6291310 (2001-09-01), Madson et al.
patent: 6413822 (2002-07-01), Williams et al.
patent: 6545316 (2003-04-01), Baliga
patent: 6781194 (2004-08-01), Baliga
patent: 6784486 (2004-08-01), Baliga
patent: 6791143 (2004-09-01), Baliga
patent: 2004/0026737 (2004-02-01), Zundel et al.
patent: 2004/0104427 (2004-06-01), Hao et al.
Davide Chiola et al., “Increased Efficiency and Improved Reliability in “ORing” Functions using Trench Schottky Technology,” 6 pages, as presented at PCIM Europe, 2002.

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