Method for reducing dendrite formation in nickel silicon...

Details Method for reducing dendrite formation in nickel silicon... Method for reducing dendrite formation in nickel silicon...

2008-01-22

2008-01-22

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000

Reexamination Certificate

active

07320938

ABSTRACT:
A method for reducing dendrite formation in a self-aligned, silicide process for a semiconductor device includes forming a silicide metal layer over a semiconductor substrate, the semiconductor device having one or more diffusion regions, one or more isolation areas and one or more gate structures formed thereon. The concentration of metal rich portions of the metal layer is reduced through the introduction of silicon thereto, and the semiconductor device is annealed.

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