Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-15
2008-07-15
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29267, C257SE29063
Reexamination Certificate
active
07400016
ABSTRACT:
In a semiconductor device, source/drain layers have a low resistivity region and an extension region extending from the low resistivity region toward the channel region. The extension regions are lower in impurity concentration and shallower in depth than the low resistivity regions. The device also has a first impurity-doped layer formed in the channel region between the source/drain layers, a second impurity-doped layer formed under the first impurity-doped layer, and a third impurity-doped layer formed under the second impurity-doped layer. The first impurity-doped layer is equal or less in junction depth than the extension regions. The second impurity doped layer has impurity concentration and thickness to be fully depleted due to a built-in potential as created between the first and third impurity-doped layers.
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Dickey Thomas L
Kabushiki Kaisha Toshiba
Pillsbury Winthrop Shaw & Pittman LLP
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