Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-15

2011-03-15

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000

Reexamination Certificate

active

07906808

ABSTRACT:
A semiconductor device includes a semiconductor layer of a first conductivity type; a deep well of a second conductivity type formed in a portion of an upper layer portion of the semiconductor layer; a well of the first conductivity type formed in a portion of an upper layer portion of the deep well; a source layer of the second conductivity type formed in the well; a drain layer of the second conductivity type formed in the well apart from the source layer; and a contact layer of the second conductivity type formed outside the well in an upper layer portion of the deep well and connected to the drain layer. The drain layer is electrically connected to the deep well via the well by applying a driving voltage between the source layer and the drain layer.

REFERENCES:
patent: 2006/0113592 (2006-06-01), Pendharkar et al.
patent: H05-335566 (1993-12-01), None
patent: 2005-85959 (2005-03-01), None
patent: 2006-245482 (2006-09-01), None
patent: 2007-049039 (2007-02-01), None
patent: 2008-066508 (2008-03-01), None
patent: 2008-235933 (2008-10-01), None
Japanese Office Action dated May 24, 2010, Japanese Patent Application No. 2008-178748.
Wang et al. “A Floating RESURF EDMOS with enhanced Safe Operating Area” IWPSD 2007, Dec. 2007.

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