Semiconductor device having silicide-blocking layer and...

Details Semiconductor device having silicide-blocking layer and... Semiconductor device having silicide-blocking layer and...

2008-04-15

2008-04-15

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S506000, C257SE23157, C438S300000

Reexamination Certificate

active

07358574

ABSTRACT:
A semiconductor device having a silicide-blocking layer is provided. The device includes a field oxide layer defining an active region, source/drain regions in the active region of a substrate, a gate oxide layer and a gate electrode on the substrate between the source/drain regions, dielectric spacers on sidewalls of the gate electrode, and a silicide layer on both the gate electrode and the source/drain regions. The device also includes the silicide-blocking layer formed over the border between the field oxide layer and the source/drain regions. The silicide-blocking layer covers edges of the source/drain regions, obstructing the extension of the silicide layer.

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