Schottky diode for high speed and radio frequency application

Details Schottky diode for high speed and radio frequency application Schottky diode for high speed and radio frequency application

2011-08-23

2011-08-23

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257SE29338

Reexamination Certificate

active

08004058

ABSTRACT:
A semiconductor diode that is disclosed. An exemplary semiconductor diode includes a portion of a semiconductor substrate including a first dopant, a first well with a Schottky region, and a second well with a second dopant; and an isolation region replacement element positioned over the semiconductor substrate and adjacent to the first and second wells.

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Swaminathan Sankaran et al., “Schottky Barrier Diodes for Millimeter Wave Detection in a Foundry CMOS Process”, 2005 IEEE Electron Device Letters, vol. 26, No. 7, Jul. 2005, pp. 492-494.
Chinese Patent Office, Office Action dated Aug. 23, 2010; Application No. 200810212852.1, 4 pages.

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