Semiconductor device internally having insulated gate...

Details Semiconductor device internally having insulated gate... Semiconductor device internally having insulated gate...

2011-03-01

2011-03-01

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S394000, C257SE29197, C257S630000

Reexamination Certificate

active

07898029

ABSTRACT:
The semiconductor device includes a P-type semiconductor region and an MOS transistor. MOS transistor includes a gate electrode, a collector electrode, a drain electrode, an N-type impurity region and a P-type impurity region. N-type impurity region is electrically connected to the drain electrode. P-type impurity region is electrically connected to the collector electrode. P-type impurity region is electrically connected to the drain electrode. The semiconductor device further includes an N-type impurity region and an electrode. N-type impurity region is electrically connected to the gate electrode. The electrode is formed on the P-type semiconductor region with an insulating film therebetween, and is electrically connected to gate electrode. Thereby, an element footprint can be reduced while maintaining characteristics.

REFERENCES:
patent: 6949797 (2005-09-01), Krumbein et al.
patent: 5-55204 (1993-03-01), None
patent: 6-196553 (1994-07-01), None
patent: 2000-100932 (2000-04-01), None
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patent: 2005-109394 (2005-04-01), None
patent: 2006-324375 (2006-11-01), None
U.S. Appl. No. 12/205,973, filed Sep. 8, 2008, Tomohide Terashima.

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