Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE51007
Reexamination Certificate
active
07902602
ABSTRACT:
The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.
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Machine English translation of JP2004-128124 of record.
Chinese Office Action mailed Jun. 27, 2008.
Koo Jae-Bon
Mo Yeon-Gon
Suh Min-chul
H.C. Park & Associates PLC
Monbleau Davienne
Roland Christopher M
Samsung Mobile Display Co., Ltd.
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