Semiconductor memory device, sense amplifier circuit and...

Static information storage and retrieval – Read/write circuit – Particular read circuit

Reexamination Certificate

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C365S189070, C365S189090, C365S189110, C365S190000, C365S208000, C365S207000

Reexamination Certificate

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07916556

ABSTRACT:
A semiconductor memory device includes: a memory cell; a sense line; and a sense amplifier circuit connected to the memory cell via the sense line. The sense amplifier circuit includes a differential sense amplifier, a pull-up section, a read gate transistor, and a threshold correction section.

REFERENCES:
patent: 6879524 (2005-04-01), Monzel
patent: 2004/0109361 (2004-06-01), Eby et al.
patent: 08-102196 (1996-04-01), None
patent: 2002-133857 (2002-05-01), None
patent: 2002-197853 (2002-07-01), None
patent: 2003-17782 (2003-01-01), None
patent: 2003-529879 (2003-10-01), None
patent: 2004-103212 (2004-04-01), None
patent: 2006-196612 (2006-07-01), None
Japanese Office Action issued Feb. 17, 2009 for corresponding Japanese Appliction No. 2007-121404.

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