Semiconductor device having metal silicide layer on...

Details Semiconductor device having metal silicide layer on... Semiconductor device having metal silicide layer on...

2011-03-01

2011-03-01

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S093000, C257SE27084, C257SE51006, C438S199000, C438S683000

Reissue Patent

active

RE042180

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.

REFERENCES:
patent: 6180469 (2001-01-01), Pramanick et al.
patent: 6204539 (2001-03-01), Oyamatsu
patent: 6410376 (2002-06-01), Ng et al.
patent: 6461906 (2002-10-01), Lung
patent: 2000-91568 (2000-03-01), None
patent: 2000-91568 (2000-03-01), None

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