Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-01-01

2008-01-01

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S261000

Reexamination Certificate

active

07315061

ABSTRACT:
An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched between the first insulating films and located in a middle portion below the floating gate electrode. The first insulating film and the second insulating film are formed in separate steps, and the first insulating film is thicker than the second insulating film. With this structure, when an insulating film is provided between the floating gate electrode and a silicon substrate to have a thickness more increased at its end portion than at its middle portion, the thickness can be increased more freely and a degree of the increase can be controlled more readily.

REFERENCES:
patent: 5847427 (1998-12-01), Hagiwara
patent: 2005/0051832 (2005-03-01), Fukumura et al.
patent: 7-249697 (1995-09-01), None
patent: 2005-85903 (2005-03-01), None

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