Solid-state imaging device having a punch-through stopper...

Details Solid-state imaging device having a punch-through stopper... Solid-state imaging device having a punch-through stopper...

2008-01-08

2008-01-08

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S293000, C257SE27133, C257SE25032

Reexamination Certificate

active

07317218

ABSTRACT:
A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.

REFERENCES:
patent: 2002/0001039 (2002-01-01), Ishiwata
patent: 2000-150847 (2000-05-01), None

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