Pre-patterned contact fill capacitor for dielectric etch protect

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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Details

361311, 361312, 257295, H01G 406

Patent

active

058019162

ABSTRACT:
Disclosed is a capacitor incorporating a material having a high dielectric constant. In a preferred embodiment, the bottom electrode is first deposited and patterned. An insulating diffusion barrier, such as LPCVD silicon nitride, is deposited over the bottom electrode and a contact is opened in the silicon nitride to exposed the bottom electrode. This contact is filled with the dielectric material. In a disclosed embodiment, the dielectric material is deposited in solution form and crystallized in a high-temperature step. A top conductive layer is deposited over the dielectric material, masked and etched to form the top conductive layer. This etch may simultaneously etch any portion of the dielectric layer overflowing the contact via.

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