Self-aligned semiconductor contact structures

Details Self-aligned semiconductor contact structures Self-aligned semiconductor contact structures

2008-07-08

2008-07-08

Landau, Matthew C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S382000, C257S314000

Reexamination Certificate

active

07397131

ABSTRACT:
A self-aligned contact structure and a method of forming the same include selected neighboring gate electrodes with adjacent sidewalls that are configured to angle toward each other. The angled surfaces of the gate electrodes can be protected using a liner layer that can extend the length of the contact window to define the sidewalls of the contact window.

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Notification of First Office Action (2sheets) and text of the First Office Action (5sheets) from the Patent Office of the Republic of China for corresponding Chinese Application No. 200310104557.1, and an English language translation of the First Office Action (Notification, 3 sheets, text, 7 sheets).

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