Static information storage and retrieval – Read/write circuit – Testing
Patent
1999-01-07
2000-12-19
Elms, Richard
Static information storage and retrieval
Read/write circuit
Testing
36523003, 36523004, 365233, G11C 700
Patent
active
061634913
ABSTRACT:
A synchronous semiconductor memory device includes a prefetch selector receiving first and second data respectively read from first and second memory cells corresponding to even and odd addresses for outputting them to a data input/output terminal. The prefetch selector sequentially outputs first and second data to the data input/output terminal in one period of a clock period in the normal operation, determines if the first and second data match in a test mode, and outputs the determination result to the data input/output terminal in one period of the clock period.
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"A 640MB/s Bi-Directional Data Strobed, Double-Data-Rate SDRAM with a 40mW DLL Circuit for a 256MB Memory System", by C. Kim, et al, 1998 IEEE International Solid State Circuits Conference, pp. 158-159.
Iwamoto Hisashi
Kubo Takashi
Elms Richard
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Hien
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