Semiconductor device including a contact connected to the...

Details Semiconductor device including a contact connected to the... Semiconductor device including a contact connected to the...

2008-07-22

2008-07-22

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S155000, C257SE27112, C257SE29147, C257SE29148

Reexamination Certificate

active

07402865

ABSTRACT:
A Schottky junction is formed at the connection between an SOI layer and a contact (namely, under an element isolation insulating film) without forming a P+region with a high impurity concentration thereat. The surface of a body contact is provide with a barrier metal. A silicide is formed between the body contact and the SOI layer as a result of the reaction of the barrier metal and the SOI layer.

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S. Maeda, et al, “Impact of 0.18μm SOI CMOS Technology Using Hybrid Trench Isolation with High Resistivity Substrate on Embedded RF/Analog Applications”, Symposium on VLSI Technology Digest of Technical Papers, IEEE 2000, pp. 154-155.

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