Seeded single crystal silicon carbide growth and resulting...

Details Seeded single crystal silicon carbide growth and resulting... Seeded single crystal silicon carbide growth and resulting...

2008-01-08

2008-01-08

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S002000, C117S003000, C117S951000

Reexamination Certificate

active

07316747

ABSTRACT:
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

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