Resistance change type memory

Details Resistance change type memory Resistance change type memory

2011-08-30

2011-08-30

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000

Reexamination Certificate

active

08009456

ABSTRACT:
A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected to the first drive line and a cathode connected to other end of the first resistance change element, a second diode having an anode connected to other end of the first resistance change element and a cathode connected to the second drive line, and a driver/sinker which supplies a write current to the resistance change element. A write control circuit is arranged such that when first data is written, the write current is caused to flow in a direction from the first drive line to the third drive line, and when second data is written, the write current is caused to flow in a direction from the third drive line to the second drive line.

REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6946712 (2005-09-01), Asao
patent: 2008/0258129 (2008-10-01), Toda
patent: 2009/0034320 (2009-02-01), Ueda
patent: 1714407 (2005-12-01), None
patent: WO 2006/055482 (2006-05-01), None
Chinese Office Action issued Nov. 22, 2010, in Chinese Patent Application No. 200910001620.6 with English translation.
Office Action issued Sep. 30, 2010, in Korean Patent Application No. 10-2009-1453 (submitting English translation only, Korean Version previously filed).

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