Methods and apparatus for forming rhodium-containing layers

Details Methods and apparatus for forming rhodium-containing layers Methods and apparatus for forming rhodium-containing layers

2008-07-01

2008-07-01

Le, Thao X. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S762000, C438S650000, C438S575000, C438S686000

Reexamination Certificate

active

07393785

ABSTRACT:
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYzis provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.

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