Method of making a haze free, lead rich PZT film

Details Method of making a haze free, lead rich PZT film Method of making a haze free, lead rich PZT film

2008-04-22

2008-04-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000

Reexamination Certificate

active

07361949

ABSTRACT:
An embodiment of the invention is a method of fabricating a haze free, phase pure, PZT layer,3, where a lead rich PZT film,102, is formed over a phase pure stoichiometric PZT film,101.

REFERENCES:
patent: 6444478 (2002-09-01), Basceri et al.

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