Semiconductor nonvolatile memory device

Details Semiconductor nonvolatile memory device Semiconductor nonvolatile memory device

2008-01-29

2008-01-29

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257SE29129, C257SE21680

Reexamination Certificate

active

07323741

ABSTRACT:
A low cost semiconductor nonvolatile memory device capable of high speed programming, using an inversion layer as the wiring, and a manufacturing method for that device. The semiconductor memory device includes an auxiliary electrode at a position between and in parallel with the source and drain regions and with no position overlap versus the source region and the drain region formed mutually in parallel; wherein the auxiliary electrode for hot electron source injection is utilized as the auxiliary electrode for programming (writing); and an inversion layer formed below the auxiliary electrode is utilized as the source region or as the drain region during the read operation.

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