Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S371000, C257SE27108
Reexamination Certificate
active
08008724
ABSTRACT:
In producing complementary sets of metal-oxide-semiconductor (CMOS) field effect transistors, including nMOS and pMOS transistors), carrier mobility is enhanced or otherwise regulated through the use of layering various stressed films over either the nMOS or pMOS transistor (or both), depending on the properties of the layer and isolating stressed layers from each other and other structures with an additional layer in a selected location. Thus both types of transistors on a single chip or substrate can achieve an enhanced carrier mobility, thereby improving the performance of CMOS devices and integrated circuits.
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Doris Bruce B.
Yang Haining
Zhu Huilong
Abate Joseph P.
Cao Phat X
International Business Machines - Corporation
Whitham Curtis Christofferson & Cook, P.C.
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