Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-01
2008-04-01
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000, C438S617000
Reexamination Certificate
active
07351651
ABSTRACT:
A metal structure for an integrated circuit, which has copper interconnecting metallization (311) protected by an overcoat layer (320). A portion of the metallization is exposed in a window (301) opened through the thickness of the overcoat layer. The metal structure comprises a patterned conductive barrier layer (330) positioned on the copper metallization, wherein this barrier layer forms a trough with walls (331) conformal with the overcoat window. The height (331a) of the wall is less (between 3 and 20 %) than the overcoat thickness (320a), forming a step (340). A plug (350) of bondable metal, preferably aluminum, is positioned in the trough and has a thickness equal to the trough wall height (331a).
REFERENCES:
patent: 4910155 (1990-03-01), Cote et al.
patent: 5725413 (1998-03-01), Malshe et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 6046966 (2000-04-01), Drake et al.
patent: 6100195 (2000-08-01), Chan et al.
patent: 6157078 (2000-12-01), Lansford
patent: 6329722 (2001-12-01), Shih et al.
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6468906 (2002-10-01), Chan et al.
patent: 6645851 (2003-11-01), Ho et al.
patent: 6649523 (2003-11-01), Basol et al.
patent: 6730590 (2004-05-01), Ohashi et al.
patent: 6780772 (2004-08-01), Uzoh et al.
patent: 6841470 (2005-01-01), Wang et al.
patent: 7061114 (2006-06-01), Hortaleza et al.
patent: 2001/0023988 (2001-09-01), Hatano et al.
patent: 2005/0206007 (2005-09-01), Li et al.
patent: 2005/0215048 (2005-09-01), Li et al.
patent: 2005/0224984 (2005-10-01), Hortaleza et al.
patent: 2005/0224987 (2005-10-01), Hortaleza et al.
patent: 2006/0082000 (2006-04-01), Li et al.
patent: 2006/0094228 (2006-05-01), Li et al.
Moussavi, M. “Comparison of barrier materials and deposition processes for copper integration.” Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International on Jun. 1-3, 1998 pp. 295-297.
Wolf, S. & Tauber, R.N. (2000). Silicon Processing for the VLSI Era: vol. 1—Process Technology (2nd ed.). Sunset Beach: Lattice Press. p. 744.
Hortaleza Edgardo R.
Li Lei
Brady III Wade James
Schillinger Laura M.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
LandOfFree
Structure and method for contact pads having a recessed... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure and method for contact pads having a recessed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for contact pads having a recessed... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2754677