Integrated micro electro-mechanical system and manufacturing...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S051000, C438S052000, C438S050000, C257S415000, C257S416000

Reexamination Certificate

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07402449

ABSTRACT:
In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

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Fujimori, T. et al., “Fully CMOS Compatible on-LSI Capacitive Pressure Sensor Fabricated Using Standard Back-End-Of-Line Processes”, Transducers '05, The 13thInternational Conference on Solid-State Sensors, Actuators and Microsystems, Seoul, Korea, Jun. 5-9, 2005, pp. 37-40.
Extended European Search Report for 05255278.3-2003 dated Jan. 25, 2008.

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