Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1992-08-12

1994-08-30

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 20429838, 118723R, H05H 100

Patent

active

053424727

ABSTRACT:
Microwave inlet ports are formed on a microwave transmission window above a plasma generation chamber. The distance from the microwave inlet ports to a support surface of a wafer support table is set to be an integer multiple of 1/2 the wavelength of the microwave. Upper and lower magnetic poles opposite to each other are arranged above and below the chamber to form a magnetic field having a uniform strength in the chamber. The strength of the magnetic field is set to be 865 Gauss as a value slightly deviating from 875 Gauss as a value satisfying ideal conditions of an electron cyclotron resonance at a microwave wavelength of 2.45 GHz. The electron energy is suppressed, and damage to the surface of a wafer can be suppressed in wafer surface processing using a plasma.

REFERENCES:
patent: 4672346 (1987-06-01), Miyamoto et al.
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 5013401 (1991-05-01), Samukawa et al.
patent: 5034086 (1991-07-01), Sato
patent: 5078851 (1992-01-01), Nishihata et al.
patent: 5181986 (1993-01-01), Ohiwa

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