Semiconductor device having epitaxial layer

Details Semiconductor device having epitaxial layer Semiconductor device having epitaxial layer

2008-01-29

2008-01-29

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S351000

Reexamination Certificate

active

07323748

ABSTRACT:
A semiconductor device includes a substrate having first and second regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, and a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer, having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and having a tapered surface faced to a side surface of the first epitaxial layer.

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