Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S315000, C257SE29129
Reexamination Certificate
active
07323744
ABSTRACT:
A semiconductor device includes an ONO film (17) formed on a semiconductor substrate (15), a first gate (14), the first gate (14) formed on the ONO film (17), a source (10) and a drain (12) provided at both sides of the first gate (14) to face each other, and a second gate (16), the second gate (16) being a side gate provided at a side of the first gate (14) other than the side where the source (10) and the drain (12) are provided. This makes it possible to provide the semiconductor device in which a desired circuit characteristic is obtainable in a non-destructive manner and in a non-volatile fashion while reducing the trial production times thereof for IC development.
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Ingrassia Fisher & Lorenz P.C.
Mandala Jr. Victor A.
Purvis Sue A.
Spansion LLC
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