Wafer processing method

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

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Details

C438S033000, C438S113000, C438S114000, C438S458000, C438S460000, C438S463000, C438S465000, C438S758000

Reexamination Certificate

active

07399682

ABSTRACT:
A wafer processing method for carrying out processing by applying a laser beam along streets formed on a wafer, comprising a step of applying a laser beam at an incident angle of a predetermined inclination angle to the normal line of a processing surface of the wafer while the wafer is processing-fed along a street from one end to the other end on the side of the laser beam application at an acute angle to the processing surface of the wafer.

REFERENCES:
patent: 4927485 (1990-05-01), Cheng et al.
patent: 5366905 (1994-11-01), Mukai
patent: 5371582 (1994-12-01), Toba et al.
patent: 6406924 (2002-06-01), Grimbergen et al.
patent: 6413839 (2002-07-01), Brown et al.
patent: 6566169 (2003-05-01), Uziel et al.
patent: 6881687 (2005-04-01), Castrucci
patent: 6905624 (2005-06-01), Frum et al.
patent: 2001/0014543 (2001-08-01), Chiba et al.
patent: 2005/0067740 (2005-03-01), Haubensak
patent: 2005/0202651 (2005-09-01), Akram
patent: 2003-320466 (2003-11-01), None
patent: 2005101416 (2005-04-01), None

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