Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-08-16

2011-08-16

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29342

Reexamination Certificate

active

07999301

ABSTRACT:
After a ferroelectric capacitor (1) is formed and before a wiring (15) to be a pad is formed, an alumina film (11) is formed as a diffusion suppressing film suppressing diffusion of hydrogen and moisture. Subsequently, the wiring (15) is formed and an SOG film (16) is formed thereon. Then, a silicon nitride film (17) is formed on the SOG film (16).

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