Compound cell spin-torque magnetic random access memory

Details Compound cell spin-torque magnetic random access memory Compound cell spin-torque magnetic random access memory

2011-03-01

2011-03-01

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S148000, C365S130000, C365S225500, C365S243500

Reexamination Certificate

active

07898849

ABSTRACT:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

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J.A. Katine et al., “Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars”, vol. 84, No. 14, Physical Review Letters Apr. 3, 2000 The American Physical Society pp. 3149-3152.

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