Methods of forming implant regions relative to transistor gates

Details Methods of forming implant regions relative to transistor gates Methods of forming implant regions relative to transistor gates

2008-07-29

2008-07-29

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S301000, C438S279000, C257SE21179, C257SE21178, C257SE21135

Reexamination Certificate

active

07405110

ABSTRACT:
The invention includes methods of forming implant regions between and/or under transistor gates. In one aspect, a pair of transistor gates is partially formed, and a layer of conductive material is left extending between the transistor gates. A dopant is implanted through the conductive material to form at least one implant region between and/or beneath the partially formed transistor gates, and subsequently the conductive material is removed from between the gates. The gates can be incorporated into various semiconductor assemblies, including, for example, DRAM assemblies.

REFERENCES:
patent: 4984042 (1991-01-01), Pfiester et al.
patent: 5194926 (1993-03-01), Hayden
patent: 6297111 (2001-10-01), Krivokapic
patent: 6498367 (2002-12-01), Chang et al.
patent: 6534787 (2003-03-01), Hsu
patent: 6555454 (2003-04-01), Park
patent: 6583443 (2003-06-01), Chang et al.
patent: 6593202 (2003-07-01), Hosotani et al.
patent: 6607955 (2003-08-01), Lee
patent: 6682997 (2004-01-01), Lawlor
patent: 7084015 (2006-08-01), Nguyen
patent: 2006/0270119 (2006-11-01), Nguyen

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