Method for selectively controlling lengths of nanowires

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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Reexamination Certificate

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07402531

ABSTRACT:
A method for selectively controlling lengths of nanowires in a substantially non-uniform array of nanowires includes establishing at least two different catalyzing nanoparticles on a substrate. A nanowire from each of the at least two different catalyzing nanoparticles is substantially simultaneously grown. At least one of the nanowires has a length different from that of at least another of the nanowires.

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