Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-07-22
2008-07-22
Norton, Nadine (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
Reexamination Certificate
active
07402531
ABSTRACT:
A method for selectively controlling lengths of nanowires in a substantially non-uniform array of nanowires includes establishing at least two different catalyzing nanoparticles on a substrate. A nanowire from each of the at least two different catalyzing nanoparticles is substantially simultaneously grown. At least one of the nanowires has a length different from that of at least another of the nanowires.
REFERENCES:
patent: 6248674 (2001-06-01), Kamins et al.
patent: 6359288 (2002-03-01), Ying et al.
patent: 6656573 (2003-12-01), Chen et al.
patent: 6699779 (2004-03-01), Chen et al.
patent: 6808605 (2004-10-01), Lee et al.
patent: 6831017 (2004-12-01), Li et al.
patent: 6841013 (2005-01-01), Weiner et al.
patent: 6843902 (2005-01-01), Penner et al.
patent: 7018549 (2006-03-01), Metz et al.
patent: 2003/0189202 (2003-10-01), Li et al.
patent: 2004/0005723 (2004-01-01), Empedocles et al.
patent: 2004/0082178 (2004-04-01), Kamins et al.
patent: 2004/0144970 (2004-07-01), Wang et al.
patent: 2005/0011431 (2005-01-01), Samuelson et al.
patent: 2005/0029678 (2005-02-01), Hanrath et al.
patent: 2005/0133476 (2005-06-01), Islam et al.
patent: 2006/0175601 (2006-08-01), Lieber et al.
Ted Kamins, The Electrochemical Society, Interface, Spring 2005, pp. 46-49.
Wu, Yiying et al., “Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires,” Nano Lett., vol. 2, No. 2, pp. 83-86, 2002.
Kamins Theodore I.
Kuekes Philip J.
Angadi Maki
Hewlett--Packard Development Company, L.P.
Norton Nadine
LandOfFree
Method for selectively controlling lengths of nanowires does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for selectively controlling lengths of nanowires, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selectively controlling lengths of nanowires will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2747348